SI4102DY-T1-GE3

Mfr.Part #
SI4102DY-T1-GE3
Manufacturer
Vishay
Package/Case
-
Datasheet
SI4102DY-T1-GE3
Description
MOSFET N-CH 100V 3.8A 8SO
Stock
35000

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Manufacturer :
Vishay
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
3.8A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
370 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Power Dissipation (Max) :
2.4W (Ta), 4.8W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
158mOhm @ 2.7A, 10V
Supplier Device Package :
8-SOIC
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
SI4102DY-T1-GE3

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