SIE816DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

60A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

77 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3100 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

10-PolarPAK® (L)

Power Dissipation (Max) :

5.2W (Ta), 125W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

7.4mOhm @ 19.8A, 10V

Supplier Device Package :

10-PolarPAK® (L)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.4V @ 250µA