TPC6010-H(TE85L,FM

Mfr.Part #
TPC6010-H(TE85L,FM
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package/Case
-
Datasheet
TPC6010-H(TE85L,FM
Description
MOSFET N-CH 60V 6.1A VS-6
Stock
35000

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
6.1A (Ta)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
830 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max) :
700mW (Ta)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
59mOhm @ 3.1A, 10V
Supplier Device Package :
VS-6 (2.9x2.8)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2.3V @ 100µA
Datasheets
TPC6010-H(TE85L,FM

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