IPD25CN10NGBUMA1

Mfr.Part #
IPD25CN10NGBUMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
IPD25CN10NGBUMA1
Description
MOSFET N-CH 100V 35A TO252-3
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
35A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2070 pF @ 50 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
71W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
25mOhm @ 35A, 10V
Supplier Device Package :
PG-TO252-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 39µA
Datasheets
IPD25CN10NGBUMA1

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