2SK536-TB-E

Manufacturer :

onsemi

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

100mA (Ta)

Drain to Source Voltage (Vdss) :

50 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

15 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

125°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

200mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

20Ohm @ 10mA, 10V

Supplier Device Package :

3-CP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

-