BST72A,112

Manufacturer :

NXP Semiconductors

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

190mA (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

40 pF @ 10 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power Dissipation (Max) :

830mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

10Ohm @ 150mA, 5V

Supplier Device Package :

TO-92-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

20V

Vgs(th) (Max) @ Id :

3.5V @ 1mA