PHD34NQ10T,118

Mfr.Part #
PHD34NQ10T,118
Manufacturer
NXP Semiconductors
Package/Case
-
Datasheet
PHD34NQ10T,118
Description
MOSFET N-CH 100V 35A DPAK
Stock
35000

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Manufacturer :
NXP Semiconductors
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
35A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1704 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
136W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
40mOhm @ 17A, 10V
Supplier Device Package :
DPAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 1mA
Datasheets
PHD34NQ10T,118

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