PHB119NQ06T,118

Mfr.Part #
PHB119NQ06T,118
Manufacturer
NXP Semiconductors
Package/Case
-
Datasheet
PHB119NQ06T,118
Description
MOSFET N-CH 55V 75A D2PAK
Stock
35000

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Manufacturer :
NXP Semiconductors
Product Category :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
75A (Tc)
Drain to Source Voltage (Vdss) :
55 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2820 pF @ 25 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max) :
200W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
7.1mOhm @ 25A, 10V
Supplier Device Package :
D2PAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 1mA
Datasheets
PHB119NQ06T,118

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