FDC658AP-G

Manufacturer :

onsemi

Product Category :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.1 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

680 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power Dissipation (Max) :

800mW (Ta)

Product Status :

Last Time Buy

Rds On (Max) @ Id, Vgs :

50mOhm @ 4A, 10V

Supplier Device Package :

SuperSOT™-6

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

3V @ 250µA