DF200R12W1H3B27BOMA1

Mfr.Part #
DF200R12W1H3B27BOMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
DF200R12W1H3B27BOMA1
Description
IGBT MOD 1200V 30A 375W
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Discrete Semiconductor Products > Transistors - IGBTs - Modules
Configuration :
2 Independent
Current - Collector (Ic) (Max) :
30 A
Current - Collector Cutoff (Max) :
1 mA
IGBT Type :
-
Input :
Standard
Input Capacitance (Cies) @ Vce :
2 nF @ 25 V
Mounting Type :
Chassis Mount
NTC Thermistor :
Yes
Operating Temperature :
-40°C ~ 150°C
Package / Case :
Module
Power - Max :
375 W
Product Status :
Active
Supplier Device Package :
Module
Vce(on) (Max) @ Vge, Ic :
1.3V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max) :
1200 V

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