HGTA32N60E2

Manufacturer :

Harris Corporation

Product Category :

Discrete Semiconductor Products > Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

50 A

Current - Collector Pulsed (Icm) :

200 A

Gate Charge :

265 nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-218-5

Power - Max :

208 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-218-5

Switching Energy :

-

Td (on/off) @ 25°C :

-

Test Condition :

-

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 32A

Voltage - Collector Emitter Breakdown (Max) :

600 V