HGTP20N60C3R

Mfr.Part #
HGTP20N60C3R
Manufacturer
Harris Corporation
Package/Case
-
Datasheet
HGTP20N60C3R
Description
40A, 600V, RUGGED N-CHANNEL IGBT
Stock
79

Request A Quote(RFQ)

* Contact Name:
  Company:
* E-Mail:
  Whatsapp:
  Comment:
Manufacturer :
Harris Corporation
Product Category :
Discrete Semiconductor Products > Transistors - IGBTs - Single
Current - Collector (Ic) (Max) :
45 A
Current - Collector Pulsed (Icm) :
300 A
Gate Charge :
122 nC
IGBT Type :
-
Input Type :
Standard
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-220-3
Power - Max :
164 W
Product Status :
Active
Reverse Recovery Time (trr) :
24 ns
Supplier Device Package :
TO-220
Switching Energy :
500µJ (on), 500µJ (off)
Td (on/off) @ 25°C :
28ns/151ns
Test Condition :
480V, 20A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic :
1.8V @ 15V, 20A
Voltage - Collector Emitter Breakdown (Max) :
600 V
Datasheets
HGTP20N60C3R

Manufacturer related products

Catalog related products

Related products

Part Manufacturer Stock Description
HGTP10N120BN onsemi 35,000 IGBT 1200V 35A 298W TO220AB
HGTP10N40C1 Harris Corporation 1,977 10A, 400V, N-CHANNEL IGBT
HGTP10N40C1D Harris Corporation 206 17.5A, 400V, N-CHANNEL IGBT
HGTP10N40E1 Harris Corporation 35,000 10A, 400V, N-CHANNEL IGBT
HGTP10N40E1D Harris Corporation 35,000 17.5A, 400V, N-CHANNEL IGBT
HGTP10N40EID Harris Corporation 35,000 17.5A, 400V, N-CHANNEL IGBT
HGTP10N40F1D Harris Corporation 806 12A, 400V, N-CHANNEL IGBT
HGTP10N50E1 Harris Corporation 15,216 10A, 500V, N-CHANNEL IGBT
HGTP10N50E1D Harris Corporation 3,712 17.5A, 500V, N-CHANNEL IGBT
HGTP12N6001 Harris Corporation 568 HGTP12N6001
HGTP12N60A4 onsemi 35,000 IGBT 600V 54A 167W TO220AB
HGTP12N60A4D onsemi 35,000 IGBT 600V 54A TO220-3
HGTP12N60C3 onsemi 35,000 IGBT 600V 24A 104W TO220AB
HGTP12N60C3D onsemi 35,000 IGBT 600V 24A TO220-3
HGTP12N60C3R Harris Corporation 3,200 24A, 600V N-CHANNEL IGBT