GT60N321(Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

60 A

Current - Collector Pulsed (Icm) :

120 A

Gate Charge :

-

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-3PL

Power - Max :

170 W

Product Status :

Obsolete

Reverse Recovery Time (trr) :

2.5 µs

Supplier Device Package :

TO-3P(LH)

Switching Energy :

-

Td (on/off) @ 25°C :

330ns/700ns

Test Condition :

-

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 60A

Voltage - Collector Emitter Breakdown (Max) :

1000 V