BFS483H6327XTSA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

65mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 15mA, 8V

Frequency - Transition :

8GHz

Gain :

19dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Operating Temperature :

150°C (TJ)

Package / Case :

6-VSSOP, SC-88, SOT-363

Power - Max :

450mW

Product Status :

Active

Supplier Device Package :

PG-SOT363-PO

Transistor Type :

2 NPN (Dual)

Voltage - Collector Emitter Breakdown (Max) :

12V