BFP410H6327XTSA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

40mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 13mA, 2V

Frequency - Transition :

25GHz

Gain :

21.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

1.2dB @ 2GHz

Operating Temperature :

150°C (TJ)

Package / Case :

SC-82A, SOT-343

Power - Max :

150mW

Product Status :

Active

Supplier Device Package :

PG-SOT343-4-2

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

5V